High Ion/Ioff current ratio graphene field effect transistor: the role of line defect
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چکیده
منابع مشابه
High I on/I off current ratio graphene field effect transistor: the role of line defect
The present paper casts light upon the performance of an armchair graphene nanoribbon (AGNR) field effect transistor in the presence of one-dimensional topological defects. The defects containing 5-8-5 sp(2)-hybridized carbon rings were placed in a perfect graphene sheet. The atomic scale behavior of the transistor was investigated in the non-equilibrium Green's function (NEGF) and tight-bindin...
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ژورنال
عنوان ژورنال: Beilstein Journal of Nanotechnology
سال: 2015
ISSN: 2190-4286
DOI: 10.3762/bjnano.6.210